?004 fairchild semiconductor corporation j une 2004 RMWM26001 rev. d RMWM26001 RMWM26001 26 ghz mixer mmic general description the RMWM26001 is a 26 ghz mixer designed for use in point to point and point to multi-point radios, and various communications applications. in conjunction with other fairchild rf components amplifiers, multipliers and mixers it forms part of a complete 23 and 26 ghz transmit/receive chipset. the RMWM26001 is a gaas mmic diode mixer utilizing our 0.25? power phemt process. the mmic can be used as both an upconverter and a downconverter and is sufficiently versatile to serve in a variety of mixer applications. features ? mil substrate conversion loss 7.5db (upconverter) conversion loss 8.5db (downconverter) no dc bias required chip size 1.95mm x 1.5mm absolute ratings electrical characteristics (at 25?), 50 ? system, lo = +12dbm note: 1: device 100% rf tested as downconverter only. lo drive = +12dbm, rf pin = -10 dbm, if = 2.6ghz. symbol parameter ratings units p in rf input power (from 50 ? source) +25 dbm t c operating baseplate temperature -30 to +85 ? t stg storage temperature range -55 to +125 ? p arameter min typ max units rf frequency range 21 26.5 ghz lo frequency range 17 ?24.1 30 ghz if frequency range (up-conv) 4.02 ?4.12 ghz if frequency range (down-conv) 2.552 ?2.602 ghz lo drive power 12 16 dbm up conversion loss 7.5 db down conversion loss 1 8.5 10 db conversion loss variation vs freq. 2 db rf port return loss 12 db lo port return loss 10 db if port return loss 8 db lo to rf isolation 20 db lo to if isolation 35 db infput p1db at if port (up-conv) 8 dbm infput p1db at rf port (down-conv) 9 dbm device
?004 fairchild semiconductor corporation RMWM26001 rev. d RMWM26001 application information caution: this is an esd sensitive device. chip carrier material should be selected to have gaas compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. the chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325? for 15 minutes. die attachment should utilize gold/tin (80/20) eutectic alloy solder and should avoid hydrogen environment for phemt devices. note that the backside of the chip is gold plated and is used as rf ground. these gaas devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. these are esd sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. all die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. the rf input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material. figure 1. functional block diagram figure 2. chip layout and bond pad locations (chip size is 1.95mm x 1.5mm x 100m. back of chip is rf ground) mmic chip mmic chip if in rf out if out rf in ground (back of chip) ground (back of chip) lo in lo in up-conversion down-conversion dimensions in mm 0.0 0.0 0.18 0.3225 0.0 0.831 0.986 1.141 1.95 1.95 0.0 0.1805 0.323 1.5 1.5
?004 fairchild semiconductor corporation RMWM26001 rev. d RMWM26001 figure 3. recommended assembly diagram recommended procedure for operation the RMWM26001 does not require bias. apply rf input signal at the appropriate frequency band and input drive level. note: use 0.003" by 0.0005" gold ribbon for bonding. rf input and output bonds should be less than 0.015" long with stress relief. 2 mil gap lo input l < 0.015" (6 places) 5 mil thick alumina 50 ? 5 mil thick alumina 50 ? 5 mil thick alumina 50 ? rf input/output rf input/output die-attach 80au/20sn
?004 fairchild semiconductor corporation RMWM26001 rev. d RMWM26001 typical characteristics -10 -8 -6 -4 -2 0 21000 21500 22000 22500 23000 23500 24000 24500 25000 25500 26000 26500 frequency (ghz) RMWM26001 26 ghz mixed on-wafer upconverter RMWM26001 26 ghz mixed on-wafer upconverter conversion gain (db) -10 -8 -6 -4 -2 0 21000 21500 22000 22500 23000 23500 24000 24500 25000 25500 26000 26500 rf input frequency (ghz) conversion gain (db)
?004 fairchild semiconductor corporation RMWM26001 rev. d RMWM26001 typical characteristics (continued) -2 16.5 17 17.5 18 18.5 19 19.5 20 20.5 lo frequency (ghz) lo, if and rf port return loss (db) rmwl26001 26 ghz mixed typical return loss performance measurements include 50 ? test fixture 21 21.5 22 22.5 23 23.5 24 24.5 16.5 17 17.5 18 18.5 19 19.5 20 20.5 lo frequency (ghz) isolation (db) rmwl26001 26 ghz mixed typical return loss performance measurements include 50 ? test fixture 21 21.5 22 22.5 23 23.5 24 24.5 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 rf port lo port if port -40 -35 -30 -25 -20 -15 -10 -5 0 lo-rf isolation u/c lo-if isolation d/c
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? rev. i11 acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? power247? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? vcx? across the board. around the world.? the power franchise ? programmable active droop?
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